the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. caution : observe precautions when handling because these devices are sensitive to electrostatic discharge silicon power mos fet ne5500234 4.8 v n - channel silicon power mos fet power amplifier for dcs1800/pcs1900 handsets document no. pu10405ej02v0ds (2nd edition) date publ ished august 2007 ns description the ne5500234 is an n - channel silicon power mos fet specially designed as the transmission power amplifier for dcs1800 and pcs1900 handsets. die are manufactured using our newmos technology (our 0.6 ? m wsi gate lateral mos fet), housed in a s urface mount 3 - pin power minimold (34 pkg) (sot - 89 type) package. the device can deliver 32 .5 dbm output power with 5 0 % power added efficiency at 1.9 g hz with 4.8 v supply voltage. features ? high output power : p out = 32 .5 dbm typ. (v ds = 4.8 v, i dset = 4 00 ma, f = 1.9 g hz, p in = 2 5 dbm) ? high power added efficiency : ? add = 5 0 % typ. (v ds = 4.8 v, i dset = 4 00 ma, f = 1 .9 ghz , p in = 2 5 dbm) ? high linear gain : g l = 1 1 db typ. ( v ds = 4.8 v, i dset = 4 00 ma, f = 1 .9 ghz ) ? surface mount package : 3 - pin p ower minimold (34 pkg) (sot - 89 type) ? single supply : v ds = 3 .0 to 6 .0 v applications ? digital cellular phones : dcs1800/pcs1900 handsets ? handheld transceiver : frs (family radio service), gmrs (general mobile radio service) ? others : general purpos e amplifiers for various applications ordering information part number order number package marking supplying form ne5500234 ne5500234 - az 3 - pin power minimold (sot - 89, our code: 34) (pb - free : external solder plating ) v2 ? magazine case ? qty 25 pcs/c ase ne5500234 - t1 ne5500234 - t1 - az 3 - pin power minimold (sot - 89, our code: 34) (pb - free : external solder plating ) ? 12 mm wide embossed taping ? source pin face the perforation side of the tape ? qty 1 kpcs/reel remarks 1. to order evaluation samples, c ontact your nearby sales office. part number for sample order: ne5500234 - a z 2. this product is containing pb - material inside. < r > < r >
data sheet pu10405ej02v0ds 2 ne5500234 absolute maximum ratings (t a = +25 ? operation in excess of any one of these parameters may result in permanent damage. pa rameter symbol ratings unit drain to source voltage v ds 20 v gate to source voltage v gs 6 .0 v drain current i d 1.0 a total power dissipation p tot 10 w channel temperature t ch 125 ? c storage temperature t stg ? 65 to +125 ? c recommended operating co nditions parameter symbol test conditions min. typ. max. unit drain to source voltage v ds 3.0 4.8 6 .0 v gate to source voltage v gs 0 2.0 3.5 v drain current i d duty cycle ? 50%, t on ? 1 s ? 0. 75 1.0 a input power p in f = 1 .9 g hz, v ds = 4.8 v ? ? 2 7 dbm electrical characteristics (t a = +25 ? parameter symbol test conditions min. typ. max. unit gate to source leak age current i gs o v gs = 6 .0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 8.5 v ? ? 100 na gate threshold voltage v th v ds = 4.8 v, i d s = 1 ma 1.0 1. 4 2.0 v thermal resistance r th channel to case ? 10 ? ? c/w transconductance g m v ds = 4.8 v, i d s = 500 ma ? 840 ? m s drain to source breakdown voltage bv dss i dss = 10 ? a 20 24 ? v output power p out f = 1.9 ghz, v ds = 4.8 v, p in = 2 5 dbm, i dset = 4 00 ma (rf off) 31.5 32 .5 ? dbm drain current i d ? 610 ? m a power added efficiency ? add 4 3 5 0 ? % linear gain note g l ? 1 1 .0 ? db no te p in = 10 dbm dc performance is 100% testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples.
data sheet pu10405ej02v0ds 3 ne5500234 typical characteristics (t a = +25 ? remark the graphs indicate no minal characteristics. < r >
data sheet pu10405ej02v0ds 4 ne5500234 remark the graphs indicate nominal characteristics.
data sheet pu10405ej02v0ds 5 ne5500234 package dimensions 3 - pin power minimold (34 pkg) (unit: mm)
6 data sheet pu10405ej02v0ds ne5500234 recommended soldering conditions this product should be soldered and mounted under the following recomm ended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 ? c or below time at peak temperature : 10 seconds or less time at temperature of 220 ? c or higher : 60 seconds or less preheating time at 120 to 180 ? c : 120 ? 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 ? c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 ? c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature ( terminal temperature) : 350 ? c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mas s) : 0.2%(wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). < r >
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